Samsung introduces 128GB, 3-bit NAND-based eMMC 5.0 mobile storage
Samsung introduced a high-performance mobile memory storage based on Embedded MultiMediaCard (eMMC) 5.0 technology. The new 128 gigabyte (GB), 3-bit NAND-based eMMC 5.0 storage is targeted at the smartphone and tablet mass markets.
While flagship smartphones are already transitioning to 128GB memory storage based on Universal Flash Storage (UFS) 2.0 or eMMC 5.1 standards, mid-market smartphones will now be able to increase their storage capacity to 128GB as well. Samsung’s new 3-bit 128GB eMMC 5.0 memory speeds up this transition as the industry’s highest density eMMC 5.0 solution.
The new 128GB eMMC 5.0 delivers 260 megabytes per second (MB/s) for sequential data reading, which is the same level of performance as that of MLC NAND-based eMMC 5.1 memory. For random data read and write operations, it can handle up to 6,000 IOPS (input/output operations per second) and 5,000 IOPS respectively, which is sufficient for supporting high definition video processing and advanced multi-tasking features. These IOPS speeds are approximately four and 10 times faster, respectively, than those of a typical external memory card.
“With the introduction of our value-focused, 3-bit NAND-based eMMC 5.0 line-up, we expect to take the lead in the expansion of high-density mobile storage,” said Dr. Jung-Bae Lee, Senior Vice President of Memory Product Planning and Application Engineering Team, Samsung Electronics. “We are continuing to enhance our next-generation embedded mobile memory offerings with improved performance and higher densities to meet increasing customer demand across the mobile industry.”